UPDATED. 2024-04-25 18:22 (목)
SK Hynix unveils 321-layer NAND
SK Hynix unveils 321-layer NAND
  • Noh Tae Min 기자
  • 승인 2023.08.10 09:45
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Company to start production in 2025
Image: SK Hynix
Image: SK Hynix

SK Hynix has unveiled a 321-layer NAND flash at a conference in the US.

The South Korean chip giant unveiled the 321-layer 1Tb triple-level cell NAND flash at Flash Summit 2023 in Santa Clara on Tuesday.

SK Hynix is the first memory chip maker to unveil a NAND with over 300 layers.

The company said its latest NAND has 59% increased productivity compared to its 238-layer 512Gb NAND.

Production of the 321-layer NAND will start in 2025, a chip it explained that meets the demand for high performance and high capacity in the AI era.

SK Hynix also unveiled PCIe Gen 5 interface SSD and UFS4.0 at the conference.


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